Surface treatment of hydrophobic ferroelectric polymers for printing

ABSTRACT

An embodiment is a method and apparatus to treat surface of polymer for printing. Surface of a polymer having a surface energy modified for a time period to control a feature characteristic and/or provide a hysteresis behavior. A material is printed on the surface to form a circuit pattern having at least one of the controlled feature characteristic and the hysteresis behavior.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of Ser. No. 12/334,370filed on Dec. 12, 2008. The entire contents of these above-referencedapplication is hereby incorporated by reference in its entirety.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT

This invention was made with Government support under Contract No.W81XWH-08-C-0065 awarded by the Defense Advanced Research ProjectsAgency (DARPA). The Government has certain rights in this invention.

TECHNICAL FIELD

The presently disclosed embodiments are directed to the field ofelectronics, and more specifically, to printing.

BACKGROUND

Printing processes have been used for patterning of lines or patterns inelectronic or semiconductor devices. Gravure offset printing was used tomake 50-μm-wide conductor lines on ceramic substrates and to patternthin-film transistors for low-cost displays. Offset printing was usedfor the fabrication of capacitors and printed and plated metal lines asnarrow as 25 μm. Printed circuit boards and integrated circuit packagingare popular applications of screen printing in the electronics industry.Inkjet printing has also become popular in various industrialfabrication processes, from microelectronics soldering, micro-machinedparts, to multicolor polymer light-emitting diode displays.

However, currently it is problematic to directly print metal orpolymeric conductor ink onto hydrophobic surfaces, because thecommercially available conductive inks tend to be hydrophilic and de-wetinto separate droplets. Cracking of the conductor lines is prevalent ondielectric polymers such as poly(vinylidene fluoride/trifluoroethylene,or P(VDF-TrFE), and leads to failure of the thin film transistor (TFT)array

FIG. 8 illustrates a prior art thin-film transistor (TFT) circuit 800with two-layer dielectric to avoid the problem of printing directly onhydrophobic P(VDF-TrFE). The TFT 800 includes a substrate 810, a 2-layerdielectric 820, a semiconductor layer 830; and source, drain, and gateelectrodes 832, 834, and 836. The 2-layer dielectric 820 includes aferroelectric PVDF-TrFE layer 822 (800 nm) and another thin layer ofdielectric 825 polymer PVP (100 nm) that is hydrophilic and compatiblefor printing. FIG. 9 illustrates prior art curves for the two-layerdielectric TFT shown in FIG. 8. The curves 910, 920, and 930 show thesource-drain current I_(sd) as function of the gate voltage V_(g). Thecurves 910, 920, and 930 correspond to different values of thesource-drain voltages. The curves 910, 920, and 930 may correspond tovalues of the source-drain voltages of −5V, −10V, and −40V,respectively. The values of the I_(sd) I₀, I₁, I₂, I₃, I₄, I₅, and I₆may be 0, −1×10⁻⁷ A, −2×10⁻⁷ A, −3×10⁻⁷ A, −4×10⁻⁷ A, −5×10⁻⁷ A, and−6×10⁻⁷ A, respectively. The values of the V_(g) V⁻², V⁻¹, V₀, V₁, andV₂ may be −50 V, −25 V, 0 V, 25 V, and 50 V, respectively. As the gatevoltage vanes, the source-drain current shows no or little hysteresisbehavior. Accordingly, the prior art design does not allow data storageas a non-volatile memory cell.

SUMMARY

One disclosed feature of the embodiments is a method and apparatus totreat surface of polymer for printing. Surface of a polymer having asurface energy modified for a time period to control a featurecharacteristic and/or provide a hysteresis behavior. A material isprinted on the surface to form a circuit pattern having at least one ofthe controlled feature characteristic and the hysteresis behavior.

One disclosed feature of the embodiments is an apparatus having apolymer with a treated surface for printing. A dielectric layer made ofa polymer having a surface with modified surface energy. The modifiedsurface energy controls a feature characteristic and/or provides ahysteresis behavior. A circuit pattern is printed on the surface. Thecircuit pattern has at least one of the controlled featurecharacteristic and the hysteresis behavior.

One disclosed feature of the embodiments is system to treat surface ofpolymer for printing. At least one of an ultra-violet (UV) source and anozone-generating source that generates ozone is used. A polymer has asurface exposed under the at least one of the UV source and theozone-generating source for a pre-determined time period. The surfacehas a surface energy modified to control a feature characteristic and/orprovide a hysteresis behavior. An ink jet printer prints a circuitpattern on the surface with the modified surface energy.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments may best be understood by referring to the followingdescription and accompanying drawings that are used to illustratevarious embodiments. In the drawings.

FIG. 1 is a diagram illustrating a system with an ozone-generatingsource and inkjet printer to perform surface treatment according to oneembodiment.

FIG. 2 is a diagram illustrating a thin film transistor according to oneembodiment.

FIG. 3 is a diagram illustrating curves showing hysteresis behavioraccording to one embodiment

FIG. 4 is a diagram illustrating line width of lines as function oftreatment time according to one embodiment.

FIG. 5 is a flowchart illustrating a process to treat surface of polymerfor printing according to one embodiment.

FIG. 6 is a flowchart illustrating a process to modify surface energy ofsurface of polymer according to one embodiment.

FIG. 7 is a flowchart illustrating a process to print material onpolymer surface according to one embodiment.

FIG. 8 is a diagram illustrating a prior art TFT circuit.

FIG. 9 is a diagram illustrating curves of the prior art TFT circuit.

DETAILED DESCRIPTION

One disclosed feature of the embodiments is a technique to treat surfaceof polymer for printing. Surface of a polymer having a surface energymodified for a time period to control a feature characteristic and/orprovide a hysteresis behavior. A material is printed on the surface toform a circuit pattern having at least one of the controlled featurecharacteristic and the hysteresis behavior. The feature characteristicmay include a feature size, feature uniformity, feature smoothness, linewidth, or ink contact angle. The hysteresis behavior provides thenon-volatile memory functionality of a memory cell. As the surfaceenergy is modified, the contact angle with the ink is adjusted. Thecontact angle between the ink and polymer surface is here defined to behydrophilic if it is below 80 degrees. However, the necessary contactangle depends on the ink-polymer combination and may be adjusted for theprinting needs.

One disclosed feature of the embodiments is an apparatus having apolymer with a treated surface for printing. A dielectric layer made ofa polymer having a surface with modified surface energy. The modifiedsurface energy controls a feature characteristic and/or provides ahysteresis behavior. A circuit pattern is printed on the surface. Thecircuit pattern has at least one of the controlled featurecharacteristic and the hysteresis behavior. The modified surface energyprovides an appropriate ink contact angle for printing.

One disclosed feature of the embodiments is system to treat surface ofpolymer for printing. At least an ultra-violet (UV) source and anozone-generating source that generates ozone is used. A polymer has asurface exposed under at least one of the UV source and theozone-generating source for a pre-determined time period. The surfacehas a surface energy modified to control a feature characteristic and/orprovide a hysteresis behavior. An ink jet printer prints a circuitpattern on the surface with the modified surface energy.

One disclosed feature of the embodiments may be described as a processwhich is usually depicted as a flowchart, a flow diagram, a structurediagram, or a block diagram. Although a flowchart may describe theoperations as a sequential process, many of the operations can beperformed in parallel or concurrently. In addition, the order of theoperations may be re-arranged. A process is terminated when itsoperations are completed. A process may correspond to a method, aprogram, a procedure, a method of manufacturing or fabrication, etc. Oneembodiment may be described by a schematic drawing depicting a physicalstructure. It is understood that the schematic drawing illustrates thebasic concept and may not be scaled or depict the structure in exactproportions.

One disclosed feature of the embodiments is a method and apparatus toprevent cracking of conductor lines on dielectric polymers which maylead to failure of TFT arrays. The technique enables patterning of TFTson ferroelectric polymers by changing the surface energy of the polymersurface. The surface energy is related to the hydrophobicity of thepolymer surface. This may be performed by UV and/or ozone treatment ofthe polymer surface followed by printing continuous conductor lines orcapacitor electrodes. The modified or treated polymer retains theelectronic functionality. The UV and/or ozone treatment may be performedby using UV source or oxygen plasma. The UV treatment may be a bettertreatment than the alternative use of oxygen plasma which may be tooharsh for polymer dielectrics.

In one embodiment, the polymer is placed, or exposed, under at least oneof an UV source and an ozone-generating source such as a UV lamp thatgenerates ozone. The polymer surface energy is modified, causing thepolymer surface to become more hydrophilic, or less hydrophibic, andshows lower contact angle with the conductive ink. The UV and/or ozonetreatment is suitable for inkjet printing. The printed lines andelectrodes remain continuous after the ozone treatment and are lesslikely to form, cracks due to de-wetting of printed ink during theannealing process. When printing on a ferroelectric co-polymer, or aPoly (Vinylidene Fluoride) (PVDF) co-polymer, such as the P(VDF-TrFE),the transistor and capacitor structure show that the ferroelectricproperties are retained and not affected by this surface modification.Compared to untreated devices, the printed transistors with UV and/orozone surface treatment show larger on-off ratio in the hysteresisbehavior for use as data storage devices.

FIG. 1 is a diagram illustrating a system 100 with at least one of a UVsource and an ozone-generating source and inkjet printer to performsurface treatment according to one embodiment. The system 100 includes asource 110, a polymer 120, a treated polymer 130, and a printer 140. Thesystem 100 may include more or less than the above components.

The source 110 may be an UV source or an ozone-generating source thatgenerates ozone (O₃). The source 110 may be a UV lamp or oxygen plasmasource. Ozone is generated from the UV wavelength emitted deep in thespectrum, particularly less than 210 nm in arc lamp systems. Typical UVlamps may include pulsed Xenon, Excimer, microwave excited, or Hg arclamps.

The polymer 120 may be any suitable polymer for fabrication ofelectronic components such as TFTs. It may be a hydrophobic polymer or aferroelectric material. It may be used as dielectrics in circuit layers.In one embodiment, the polymer 130 has a hydrophobic surface such as aPVDF co-polymer (e.g, P(VDF-TrFE)). The polymer 120 has a surface 125that is exposed under the source 110 for a pre-determined time period.As the chain length of the polymer molecules on the surface is shortenedunder the influence of the generated ozone, the surface energy of thesurface 125 is modified, causing the surface 125 to become morehydrophilic, or less hydrophobic. The hydrophobicity of the surface 125may be reduced by increasing the level of UV and/or ozone exposure. Thismay be achieved by using a high power UV lamp or by increasing theexposure time period.

After the surface 125 is treated with UV and/or ozone to achieve adesired modified surface energy or reduced hydrophobicity, the polymer120 becomes the treated polymer 130. The treated polymer 130 has asurface 135 having a surface energy modified, or a hydrophobicityreduced, at a desired level to control the feature characteristic of theprinting pattern and/or to provide hysteresis behavior to the printedcircuit pattern. The feature characteristic may include the smoothnessor uniformity of the feature or the line width. For example, aftermodifying the surface energy, a narrow continuous line of silvernanoparticle ink may be jet-printed without problems of excessive inkspreading, de-wetting or formation of bulges in the printed line. A moreuniform line with line width and line thickness uniformity results.

The printer 140 prints a circuit pattern 150 on the oxidized surface 135of the polymer 130. In one embodiment, the printer 140 is an inkjetprinter. The inkjet printer 140 may operate in a continuous ordrop-on-demand (DOD) mode. The inkjet printing may be combined with spincoating to fabricate the TFTs.

The circuit pattern 150 may be an electronic conducting feature, ametal, a conductor or a semiconductor such as metal nanoparticles, apolymeric ink pattern, a circuit including at least an active element ora passive element, a non-volatile memory cell, a conductive trace, acapacitor electrode, a bus line, a via hole interconnect, and a contact,or any other patterns that are suitable for fabrication of electronicdevices. Examples of an active element may include a diode or a TFT.Examples of a passive element may include a resistor, a capacitor, or aninductor. Since the surface 135 is treated to be modified with UV and/orozone, the surface becomes more hydrophilic which facilitates theprinting of the circuit pattern 150. The printed conductive trace has auniform width and low resistance.

The treated polymer 130 allows the circuit pattern 150 to be printed onthe treated surface 135 without cracking as result of de-wetting.Without the surface treatment, severe de-wetting may destroy thecapacitor electrode or crack conductive line. In one experiment, linesusing Ag conductive ink are printed on an untreated surface. A 1 mm×50μm printed conductive line becomes cracked leading to a resistance of 4kΩ. In contrast, for the same printing dimensions with a treatedsurface, the capacitor electrodes and lines printed on UV- and/orozone-treated polymer are uniform and the resistance of a 1 mm×50 μmline is measured to be 14Ω. Furthermore, the line width of theconducting line may be adjusted by varying the exposure time.

The surface treatment of the polymer 120 retains all the functionalaspects of the material. For example, the bulk hysteresis behavior of aprinted capacitor using ferroelectric dielectric PVDF co-polymer, suchas P(VDF-TrFE), is maintained. The hysteresis behavior is useful inprinting non-volatile memory devices. The surface treatment is useful tofabricate a memory cell by printing.

To avoid the problem of direct printing on a hydrophobic polymer (e.g.,P(VDF-TrFE)), a bi-layer construction that uses a two-layer dielectricwhich includes a ferroelectric P(VDF-TrFE) and a thin dielectric polymerPVP may be employed as shown in the prior art circuit in FIG. 8.However, this fabrication technique does not retain the hysteresisneeded for data storage as shown in FIG. 9. In contrast, a single layerof dielectric using polymer with surface treatment exhibits high gatecapacitance and hysteresis behavior for use as a non-volatile memorydevice.

FIG. 2 is a diagram illustrating a thin film transistor (TFT) 200according to one embodiment. The TFT 200 includes a substrate 210, adielectric layer 220, a semiconductor layer 230; and source, drain, andgate electrodes 232, 234, and 236. The TFT 200 may include more or lessthan the above components. The TFT 200 uses only a single layer ofdielectric, the dielectric layer 220. The TFT 200 may be used as anon-volatile memory cell. The non-volatile memory cells may form amemory array.

The substrate 210 may be a substrate made of any suitable material,including silicon wafer, glass plate, plastic film or sheet. Examples ofthe substrate material may be acrylics, epoxies, polyamides,polycarbonates, polyimides, or polyketones.

The dielectric layer 220 may be any suitable dielectric. In oneembodiment, the dielectric is a hydrophobic polymer such aspoly-silsesquioxane (PSSQ). In another embodiment, it is a ferroelectricpolymer, such as PVDF and its co-polymer P(VDF-TrFE). The surface of thedielectric layer is UV and/or ozone treated to exhibit a desired surfaceenergy which may provide a desired contact angle with the printing ink.

The semiconductor layer 230 may be any suitable semiconductor. In oneembodiment, it is a solution-based polymeric semiconductor. In oneembodiment, the polymeric semiconductor may be regioregularpolythiophene, poly(5,5′-bis-dodecyl-2-thienyl)-2,2′-bithiophene(PQT-12) or poly(9-9′dioctyl-fluorene-co-bithiophene) (F8T2). Thesemiconductor layer 230 may be deposited using an additive jet-printingprocess.

The source, drain, and gate electrodes 232, 234, and 236 may be anysuitable electrically conductive material. It may be made of thin metal,aluminum, gold, chromium, indium tin oxide, conducting polymer such asPSS-PEDOT. They may be deposited using a printing process.

In contrast to the bi-layer construction that uses a two-layerdielectric to avoid the problem of direct printing on hydrophobicpolymer (e.g., P(VDF-TrFE)), the TFT 200 exhibits hysteresis behavior toallow data storage such as non-volatile memory. The TFT 200 may haveslightly higher switching voltages than the untreated TFT, but theon-off ratio is larger than the untreated TFT.

FIG. 3 is a diagram illustrating curves showing hysteresis behavioraccording to one embodiment. The curves include a curve 310, a curve320, and a curve 330. The curves 310, 320, and 330 show the source-draincurrent I_(sd) as function of the gate voltage V_(g). The curves 310,320, and 330 correspond to different values of the source-drainvoltages. In one experiment, the curves 310, 320, and 330 correspond tovalues of the source-drain voltages of −5V, −10V, and −40V,respectively. The values of the I_(sd) I₀, I₁, I₂, I₃, and I₄ are 0,−4×10⁻⁷ A, −8×10⁻⁷ A, −1.2×10⁻⁶ A, and −1.6×10⁻⁶ A, respectively. Thevalues of the V_(g) V⁻², V⁻¹, V₀, V₁, and V₂ are −50 V, −25 V, 0 V, 25V, and 50 V, respectively. It is noted that these values may be changedaccording to the experimental conditions.

Each of the curves 310, 320, and 330 shows that as the gate voltageincreases, turning on the transistor, and then decreases, turning offthe transistor, the source-drain current exhibits a hysteresis behavior.This hysteresis behavior provides the transistor a memory functionalitywhich is used as data storage for a non-volatile memory cell.Accordingly, modifying the surface energy of the surface of the polymermay provide a hysteresis behavior to the circuit printed on the polymersurface.

Compared to an untreated device, such as the prior art circuit shown inFIG. 8, the TFT with treated dielectric surface shows higher switchingvoltages (higher by ˜5V) than the untreated TFT in FIG. 8. However, theon-off ratio is larger for the treated TFT. Varying the treatment timefrom 25 s seconds to 150 seconds does not significantly alter theswitching voltages.

An advantage of using UV- and/or ozone-treated polymer is that the linewidth of the conductive lines printed on the treated surface may becontrolled. This lowers conductor resistance by dry surface treatmentthat is compatible with roll-to-roll processing at low temperature.

FIG. 4 is a diagram illustrating line width L of lines as function oftreatment time according to one embodiment. The diagram shows the linewidth L in μm from values ranging from L1 to L10 and the treatment timein seconds. The treatment time is the time the surface of the polymer isexposed under at least one of the UV source and the ozone-generatingsource.

The treatment time may range from a few seconds to 200 seconds. The linewidth increases as the treatment time increases. In one experiment, thevalues of L₁, L₂, L₃, L₄, L₅, L₆, L₇, L₈, L₉, L₁₀ are 10 μm, 20 μm, 30μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, and 100 μm, respectively.The relationship is somewhat linear.

Accordingly, the line width may be controlled by varying the exposuretime. For narrow line widths, the exposure time is short. For largelines widths, the exposure time is long. It is contemplated that thesurface energy, or the hydrophobicity, of the surface of the polymer mayalso be a function of the time period of exposure the surface under theUV and/or ozone source. Accordingly, modifying the surface energy of thesurface of the polymer may control a feature characteristic (e.g.,feature uniformity, feature size, line width, ink contact angle) of thecircuit pattern.

FIG. 5 is a flowchart illustrating a process 500 to treat surface ofpolymer for printing according to one embodiment.

Upon START, the process 500 modifies surface energy of surface of apolymer for a time period to control a feature characteristic and/or toprovide hysteresis behavior (Block 510). The feature characteristic mayinclude a feature size, feature uniformity, feature smoothness, linewidth, or ink contact angle. This may also reduce the hydrophobicity.Reducing the hydrophobicity is increasing the hydrophilicity. In oneembodiment, the polymer is a hydrophobic polymer or a ferroelectricmaterial. In one embodiment, the ferroelectric material is a PVDFcopolymer, such as P(VDF-TrFE). Next, the process 500 adjusts the timeperiod (Block 520). Then, the process 500 determines if the surfaceenergy or the hydrophobicity reaches a desired level (Block 530). Thedesired level may be obtained from experiments for desired result. Forexample, if the line width is desired to be at a certain value,experimental curves such as the curve shown in FIG. 4 may be used toguide the selection of the time period. If the desired level is notreached, the process 500 returns to Block 520 to adjust the time period.Otherwise, the process 500 prints a material on the surface to form acircuit pattern (Block 540). The circuit pattern may be an electronicconducting feature, a metal, a conductor or a semiconductor such asmetal nanoparticles, a polymeric ink pattern, a circuit including atleast an active element or a passive element, a non-volatile memorycell, a conductive trace, a capacitor electrode, a bus line, a via holeinterconnect, a contact, or any other patterns that are suitable forfabrication of electronic devices. The process 500 is then terminated.

FIG. 6 is a flowchart illustrating the process 510 shown in FIG. 5 tomodify the surface energy of the surface of polymer according to oneembodiment.

Upon START, the process 510 exposes the surface of the polymer to/underat least one of a UV source and an ozone-generating source thatgenerates ozone (Block 610). The process 510 is then terminated.

FIG. 7 is a flowchart illustrating the process 540 shown in FIG. 5 toprint material on polymer surface according to one embodiment.

Upon START, the process 540 prints a conductor or a semiconductor suchas metal nanoparticles, or a polymeric ink on the surface to form thecircuit pattern (Block 710). The circuit pattern may correspond to aconducting feature, a circuit including at least an active element or apassive element, a non-volatile memory cell, a conductive trace, acapacitor electrode, a bus line, a via hole interconnect, or a contact,etc. The process 540 is then terminated.

It will be appreciated that various of the above-disclosed and otherfeatures and functions, or alternatives thereof, may be desirablycombined into many other different systems or applications. Variouspresently unforeseen or unanticipated alternatives, modifications,variations, or improvements therein may be subsequently made by thoseskilled in the art which are also intended to be encompassed by thefollowing claims.

What is claimed is:
 1. A method comprising: modifying surface energy ofsurface of a polymer for a time period to control a featurecharacteristic and/or provide a hysteresis behavior; and printing amaterial on the surface to form a circuit pattern having at least one ofthe controlled feature characteristic and the hysteresis behavior. 2.The method of claim 1 wherein modifying the surface energy comprises:exposing the surface of the polymer to/under at least one of anultra-violet (UV) source and an ozone-generating source.
 3. The methodof claim 2 wherein exposing the surface comprises: adjusting the timeperiod such that the feature characteristic reaches a desired level. 4.The method of claim 1 wherein the feature characteristic includes atleast one of a feature size, a feature uniformity, a contact angle, anda line width.
 5. The method of claim 1 wherein the polymer is ahydrophobic polymer or a ferroelectric material.
 6. The method of claim5 wherein the ferroelectric material is a Poly (Vinylidene Fluoride)(PVDF) co-polymer.
 7. The method of claim 1 wherein printing thematerial comprises: printing a conductor or a semiconductor, includingmetal nanoparticles, or a polymeric ink on the surface.
 8. The method ofclaim 1 wherein printing the material comprises: printing the materialon the surface using ink jet printing.
 9. The method of claim 7 whereinprinting the metal or the polymeric ink comprises: printing a circuitincluding at least one of an active element and a passive element. 10.The method of claim 9 wherein printing the circuit comprises: printing anon-volatile memory cell.
 11. A system comprising: at least one of anultra-violet (UV) source and an ozone-generating source that generatesozone; a polymer having a surface exposed to/under the at least one ofthe UV source and the ozone-generating source for a pre-determined timeperiod, the surface having a surface energy modified to control afeature characteristic and/or provide a hysteresis behavior; and an inkjet printer to print a circuit pattern on the surface with the modifiedsurface energy.
 12. The system of claim 11 wherein the featurecharacteristic includes at least one of a feature size, a featureuniformity, a contact angle, and a line width.
 13. The system of claim11 wherein the polymer is a hydrophobic polymer or a ferroelectricmaterial.
 14. The system of claim 13 wherein the ferroelectric materialis a Poly (Vinylidene Fluoride) (PVDF) co-polymer.
 15. The system ofclaim 11 wherein the circuit pattern comprises: a circuit including atleast one of an active element and a passive element.
 16. The system ofclaim 11 wherein the TFT circuit comprises: a non-volatile memory cell.